Staff Engineer, VLSI Design Engineering (Circuit Design, Complier, SRAM, Memory)

The individual will design, modify, and evaluate CMOS circuit structures for advanced NAND flash memory. Responsibilities also include verifying designs in simulation and collaborating with various teams for silicon evaluation and integration.

Responsibilities

• Designing, modifying, and evaluating CMOS circuit structures for high-performance low-power 3-dimensional NAND flash memory
• Verifying designs in simulation and interacting with layout, logic, and other functional groups
• Collaborating with characterization engineers to fully characterize silicon
• Partnering with other designers to develop solutions for silicon issues
• Responsible for full chip silicon evaluation through probing
• Interacting with Memory Device team for transistor models, EDR/GDR requirements, and tradeoffs

Requirements

• B.E./B.Tech/M.E/M.S/M.Tech in electronics branches
• Aggregate of 75% & Above in all qualifying exams
• 4+ years of relevant Industry Experience

Key Skills

• CMOS transistor level design
• Simulation and layout knowledge of common custom circuits like amplifiers, current mirrors, level shifters, switches, decoders
• Knowledge of running and debugging Verilog simulations
• Good understanding of Solid-State device physics
• Comfortable with IC tools such as Cadence analog design environment, HSPICE/FINESIM, VCS/EXCELIUM, UNIX
• Ability to troubleshoot and analyze complex problems
• Excellent communication skills to effectively collaborate with Off-site counterparts across global teams